vs-16tts..pbf series, vs-16tts..-m3 series www.vishay.com vishay semiconductors revision: 26-jul-13 1 document number: 94603 for technical questions within your region: diodes-tech@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thyristor high voltage, phase control scr, 16 a features ? designed and qualified according to jedec-jesd47 ? 125 c max. operating junction temperature ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ? typical usage is in input rectification crowbar (soft start) and ac switch in motor contro l, ups, welding, and battery charge description the vs-16tts... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operating up to 125 c junction temperature. note (1) for higher voltage up to 1600 v contact factory product summary package to-220ab diode variation single scr i t(av) 10 a v drm /v rrm 800 v, 1200 v v tm 1.4 v i gt 60 ma t j - 40 c to 125 c ( g ) 3 2 (a) 1 (k) to-220ab 1 2 3 available output current in typical applications applications single-phase bridge three-phase bridge units capacitive input filter t a = 55 c, t j = 125 c, ? common heatsink of 1 c/w 13.5 17 a major ratings and characteristics parameter test conditions values units i t(av) sinusoidal wa v eform 10 a i rms 16 v drm /v rrm range (1) 800/1200 v i tsm 200 a v t 10 a, t j = 25 c 1.4 v dv/dt 500 v/s di/dt 150 a/s t j range - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm at 125 c ma vs-16tts08p b f, vs-16tts08-m3 800 800 10 vs-16tts12p b f, vs-16tts12-m3 1200 1200
vs-16tts..pbf series, vs-16tts..-m3 series www.vishay.com vishay semiconductors revision: 26-jul-13 2 document number: 94603 for technical questions within your region: diodes-tech@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units typ. max. maximum a v erage on-state current i t(av) t c = 98 c, 180 conduction, half sine wave 10 a maximum rms on-state current i rms 16 maximum peak, one-cycle, ? non-repetiti v e surge current i tsm 10 ms sine pulse, rated v rrm applied 170 10 ms sine pulse, no v oltage reapplied 200 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 144 a 2 s 10 ms sine pulse, no v oltage reapplied 200 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no v oltage reapplied 2000 a 2 ? s maximum on-state v oltage drop v tm 10 a, t j = 25 c 1.4 v on-state slope resistance r t t j = 125 c 24.0 m ? threshold v oltage v t(to) 1.1 v maximum re v erse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 125 c 10 holding current i h anode supply = 6 v, resistive load, initial i t = 1 a ? 16tts08pbf, 16tts12pbf, t j = 25 c - 150 maximum latching current i l anode supply = 6 v, resistive load, t j = 25 c 200 maximum rate of rise of off-state v oltage dv/dt t j = t j max., linear to 80 c, v drm = r g - k = open 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum a v erage gate power p g(av) 2.0 maximum peak positi v e gate current + i gm 1.5 a maximum peak negati v e gate v oltage - v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = - 65 c 90 ma anode supply = 6 v, resistive load, t j = 25 c 60 anode supply = 6 v, resistive load, t j = 125 c 35 maximum required dc gate ? v oltage to trigger v gt anode supply = 6 v, resistive load, t j = - 65 c 3.0 v anode supply = 6 v, resistive load, t j = 25 c 2.0 anode supply = 6 v, resistive load, t j = 125 c 1.0 maximum dc gate v oltage not to trigger v gd t j = 125 c, v drm = rated value 0.25 maximum dc gate current not to trigger i gd 2.0 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical re v erse reco v ery time t rr t j = 125 c 4 typical turn-off time t q 110
vs-16tts..pbf series, vs-16tts..-m3 series www.vishay.com vishay semiconductors revision: 26-jul-13 3 document number: 94603 for technical questions within your region: diodes-tech@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg - 40 to 125 c maximum thermal resistance, ? junction to case r thjc dc operation 1.3 c/w maximum thermal resistance, ? junction to am b ient r thja 62 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (l b f in) maximum 12 (10) marking de v ice case style to-220ab 16tts08 16tts12 90 95 100 105 110 115 120 125 024681012 30 60 90 120 180 conduction angle average on-state current (a) maximum allowable case temperature (c) 16tts.. series r (dc) = 1.3 c/ w thjc 90 95 100 105 110 115 120 125 0246810121416 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average on-state current (a) 16tts.. series r (dc) = 1.3 c/ w thjc 0 2 4 6 8 10 12 14 16 18 01234567891011 rm s li m i t 180 120 90 60 30 conduction angle average on-state current (a) maximum average on-state power loss (w) 16tts.. series t = 1 2 5 c j 0 5 10 15 20 25 0 2 4 6 8 1012141618 dc 180 120 90 60 30 rm s li m i t conduction period average on-state current (a) maximum average on-state power loss (w) 16tts.. series t = 1 2 5 c j
vs-16tts..pbf series, vs-16tts..-m3 series www.vishay.com vishay semiconductors revision: 26-jul-13 4 document number: 94603 for technical questions within your region: diodes-tech@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximu m non-repetitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristics 80 100 120 140 160 180 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with ra ted v app lied following surg e. initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s rrm j peak half sine wave on-state current (a) 16tts ..series 80 100 120 140 160 180 200 0.01 0.1 1 pulse train duration (s) maximum non repetitive surge current pea k ha lf sine wave forwa rd current (a) versus pulse t ra in dura tion. init ial t = 125c no vo ltage reap plied ra t e d v re a p p l i e d j rrm 16tts .. series 1 10 100 1000 012345 t = 2 5 c j t = 125c j instantaneous on-state voltage (v) instantaneous on-state current (a) 16tts.. se rie s 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 squa re wave pulse durat ion (s) thjc steady state value (dc operation) 16tts.. series si n g l e p u l se d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 transient thermal impedance z (c/w)
vs-16tts..pbf series, vs-16tts..-m3 series www.vishay.com vishay semiconductors revision: 26-jul-13 5 document number: 94603 for technical questions within your region: diodes-tech@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a) rectangular gate pulse (4) (3) (2) (1) instantaneous gate current (a) instantaneous gate voltage (v) t j = 25 c tj = 12 5 c b)recommended load line for vgd igd frequency limited by pg(av) a)recommended load line for ra te d d i/ d t: 10 v, 20 o hms tr = 0.5 s, tp >= 6 s <= 30% ra ted d i/ d t: 10 v, 65 ohms tr = 1 s, tp >= 6 s (1) pgm = 40 , tp = 1 ms (2) pgm = 20 w, t p = 2 ms (3) pgm = 8 w, tp = 5 ms (4) pgm = 4 w, tp = 10 ms tj = - 1 0 c 1 6 tts. . se r i e s ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-16tts08p b f 50 1000 antistatic plastic tubes vs-16tts08 -m3 50 1000 antistatic plastic tubes vs-16tts12p b f 50 1000 antistatic plastic tubes vs-16tts12 -m3 50 1000 antistatic plastic tubes links to related documents dimensions www.vishay.com/doc?95222 part marking information to-220ab pbf www.vishay.com/doc?95225 to-220ab -m3 www.vishay.com/doc?95028 2 - current rating 3 - circuit configuration: 4 - package: 5 6 - voltage code x 100 = v rrm t = single thyristor - type of silicon: t = to-220ab s = converter grade - 08 = 800 v 12 = 1200 v 7 device code 6 2 4 3 5 7 16 t t s 12 pbf environmental digit: pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant, and terminations lead (pb)-free vs- 1 1 - vishay semiconductors product
document number: 95222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0.005" ) per side. these dimensions are measured at the outermost extremes of th e plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) dimensions e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to- 220, except a2 (maximum) and d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 ? 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6)
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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